參數(shù)資料
型號: PHX8NQ11T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel TrenchMOS-TM standard level FET
中文描述: 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220F, FULL PACK-3
文件頁數(shù): 6/12頁
文件大?。?/td> 84K
代理商: PHX8NQ11T
Philips Semiconductors
PHX8NQ11T
N-channel TrenchMOS standard level FET
Product data
Rev. 01 — 14 May 2004
6 of 12
9397 750 13285
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
x R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 5.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ai95
0
4
8
12
16
0
2
4
6
VDS (V)
ID
(A)
6.5 V
Tj
= 25
°
C
VGS = 4.5 V
10 V
6 V
5.5 V
5 V
7 V
03ai97
0
4
8
12
16
0
2
4
6
8
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25
°
C
175
°
C
03ai96
0
0.1
0.2
0.3
0
4
8
12
16
ID (A)
RDSon
(
)
7 V
VGS = 5 V
Tj = 25
°
C
5.5 V
10 V
6 V
03aa29
0
1
2
3
-60
0
60
120
180
T
j
(
°
C)
a
a
R
R
DSon 25 C
)
----------------------------
=
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