- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296802 > PHX6N50E (NXP SEMICONDUCTORS) PowerMOS transistors Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號： | PHX6N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 73K |
| 代理商： | PHX6N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N50E
Avalanche energy rated
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
V
DSS = 500 V
Stable off-state characteristics
High thermal cycling performance
I
D = 3.1 A
Isolated package
R
DS(ON) ≤ 1.5
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
enhancement
mode
PIN
DESCRIPTION
field-effect
power
transistor,
intended for use in off-line switched
1
gate
mode power supplies, T.V. and
computer monitor power supplies,
2
drain
d.c. to d.c. converters, motor control
circuits
and
general
purpose
3
source
switching applications.
case
isolated
The PHX6N50E is supplied in the
SOT186A
full
pack,
isolated
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
500
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
500
V
GS
Gate-source voltage
-
± 30
V
I
D
Continuous drain current
T
hs =
25 C; V
GS = 10 V
-
3.1
A
T
hs = 100 C; VGS = 10 V
-
2
A
I
DM
Pulsed drain current
T
hs = 25 C
-
24
A
P
D
Total dissipation
T
hs = 25 C
-
35
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 4.2 A;
-
287
mJ
energy
t
p = 0.21 ms; Tj prior to avalanche = 25C;
V
DD ≤ 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:17
E
AR
Repetitive avalanche energy
1
I
AR = 5.9 A; tp = 2.5 s; Tj prior to
-
10
mJ
avalanche = 25C; R
GS = 50 ; VGS = 10 V;
refer to fig:18
I
AS, IAR
Repetitive and non-repetitive
-
5.9
A
avalanche current
d
g
s
12 3
case
1 pulse width and repetition rate limited by T
j max.
December 1998
1
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHX6N60E | PowerMOS transistors Avalanche energy rated |
| PHX6NA60E | PowerMOS transistors Low capacitance Avalanche energy rated |
| PHX6ND50E | Tantalum Capacitor; Capacitor Type:Solid; Voltage Rating:35VDC; Capacitor Dielectric Material:Tantalum; Capacitance:8.2uF; Capacitance Tolerance:+/- 10%; Termination:Axial Leaded RoHS Compliant: Yes |
| PI2EQX3211AHEX | SPECIALTY INTERFACE CIRCUIT, PDSO20 |
| PI2EQX3211AHE | SPECIALTY INTERFACE CIRCUIT, PDSO20 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHX6N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX6NA60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Low capacitance Avalanche energy rated |
| PHX6ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHX7N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX7N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。