參數(shù)資料
型號(hào)： PHX6N50E
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistors Avalanche energy rated
中文描述： 3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝： FULL PACK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 73K
代理商： PHX6N50E
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N50E
Avalanche energy rated
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
V
DSS = 500 V
Stable off-state characteristics
High thermal cycling performance
I
D = 3.1 A
Isolated package
R
DS(ON) ≤ 1.5
GENERAL DESCRIPTION
PINNING
SOT186A
N-channel,
enhancement
mode
PIN
DESCRIPTION
field-effect
power
transistor,
intended for use in off-line switched
1
gate
mode power supplies, T.V. and
computer monitor power supplies,
2
drain
d.c. to d.c. converters, motor control
circuits
and
general
purpose
3
source
switching applications.
case
isolated
The PHX6N50E is supplied in the
SOT186A
full
pack,
isolated
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
500
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
500
V
GS
Gate-source voltage
-
± 30
V
I
D
Continuous drain current
T
hs =
25 C; V
GS = 10 V
-
3.1
A
T
hs = 100 C; VGS = 10 V
-
2
A
I
DM
Pulsed drain current
T
hs = 25 C
-
24
A
P
D
Total dissipation
T
hs = 25 C
-
35
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
AS = 4.2 A;
-
287
mJ
energy
t
p = 0.21 ms; Tj prior to avalanche = 25C;
V
DD ≤ 50 V; RGS = 50 ; VGS = 10 V; refer
to fig:17
E
AR
Repetitive avalanche energy
1
I
AR = 5.9 A; tp = 2.5 s; Tj prior to
-
10
mJ
avalanche = 25C; R
GS = 50 ; VGS = 10 V;
refer to fig:18
I
AS, IAR
Repetitive and non-repetitive
-
5.9
A
avalanche current
d
g
s
12 3
case
1 pulse width and repetition rate limited by T
j max.
December 1998
1
Rev 1.200
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