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參數(shù)資料
| 型號(hào)： | PHX6N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 73K |
| 代理商： | PHX6N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N50E
Avalanche energy rated
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Ths)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Ths); conditions: VGS ≥ 10 V
Fig.3. Safe operating area. T
hs = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-hs = f(t); parameter D = tp/T
Fig.5. Typical output characteristics.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance.
R
DS(ON) = f(ID); parameter VGS
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
PHX2N60
1ms
1s
Zth j-hs, Transient thermal impedance (K/W)
1us
10us
100us
10ms
100ms
tp, pulse width (s)
0.001
0.01
0.1
1
10
D =
tp
T
P
t
D
single pulse
D = 0.5
0.2
0.02
0.1
0.05
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
5
10
15
20
25
30
0
5
10
15
6.5 V
10 V
PHP4N50
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
5 V
5.5 V
6 V
7 V
VGS = 4.5 V
Tj = 25 C
1
10
100
1000
10000
0.01
0.1
1
10
100
PHX4N50
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
1 ms
100 ms
DC
tp = 10 us
10 ms
RDS(ON)
=
VDS/ID
100 us
0
5
10
15
0
1
2
3
4
PHP4N50
5 V
5.5 V
10 V
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
4.5 V
VGS = 6 V
Tj = 25 C
6.5 V
7 V
December 1998
4
Rev 1.200
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