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參數(shù)資料
| 型號： | PHX6N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 3.1 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 73K |
| 代理商： | PHX6N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
PHX6N50E
Avalanche energy rated
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG); parameter VDS
Fig.14. Typical switching times; t
d(on), tr, td(off), tf = f(RG)
Fig.15. Normalised drain-source breakdown voltage;
V
(BR)DSS/V(BR)DSS 25 C = f(Tj)
Fig.16. Source-Drain diode characteristic.
I
F = f(VSDS); parameter Tj
Fig.17. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tp);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR) versus avalanche time (tp)
0
102030
4050607080
0
5
10
15
PHP4N50
Qg, Gate charge (nC)
VGS, Gate-Source voltage (Volts)
ID = 6 A
Tj = 25 C
250 V
VDD = 400 V
100 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP4N50
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
150 C
Tj = 25 C
0
1020
3040
5060
1
10
100
1000
tr
PHP4N50
RG, Gate resistance (Ohms)
Switching times (ns)
Tj = 25 C
RD = 39 Ohms
VGS = 10 V
td(on)
td(off)
tf
VDD = 250 V
PHP6N50E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP6N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
December 1998
6
Rev 1.200
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