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參數(shù)資料
| 型號(hào)： | PHX4N40E |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.7 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | PHX4N40E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N40E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
hs
= 25C
MIN.
-
TYP. MAX. UNIT
-
4.4
A
T
hs
= 25C
-
-
18
A
I
S
= 4.4 A; V
GS
= 0 V
I
S
= 4.4 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
250
2.2
December 1998
3
Rev 1.200
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| PHX4N50E | PowerMOS transistor Isolated version of PHP4N50E |
| PHX4N60E | PowerMOS transistors Avalanche energy rated |
| PHX4ND40E | PowerMOS transistors FREDFET, Avalanche energy rated |
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| PI-F2731-75L | Radar Pulsed Power Transistor, 75W, 300ms Pulse, 10% Duty 2.7 - 3.1 GHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHX4N50E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP4N50E |
| PHX4N60E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4ND40E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHX5N40E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP10N40E |
| PHX5N50E | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP8N50E |
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