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參數(shù)資料
| 型號： | PHX4N40E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 2.7 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 封裝： | FULL PACK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 72K |
| 代理商： | PHX4N40E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHX4N40E
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
Thermal resistance junction
to heatsink
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP. MAX. UNIT
-
4.1
K/W
-
60
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 400 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
400
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 2.2 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 2.2 A
-
1.3
3.0
2.2
1
30
10
26
2
14
10
30
55
38
4.5
7.5
1.8
4.0
-
25
250
200
30
4
17
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
1.3
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 320 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
I
D
= 4.4 A; V
DD
= 320 V; V
GS
= 10 V
V
DD
= 200 V; R
D
= 47
;
R
G
= 18
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
310
60
36
-
-
-
pF
pF
pF
December 1998
2
Rev 1.200
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PDF描述 |
|---|---|
| PHX4N50E | PowerMOS transistor Isolated version of PHP4N50E |
| PHX4N60E | PowerMOS transistors Avalanche energy rated |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHX4N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP4N50E |
| PHX4N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHX4ND40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHX5N40E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP10N40E |
| PHX5N50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP8N50E |
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