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參數(shù)資料
| 型號： | PHX14NQ20T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 7.6 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, TO-220, FPAK-3 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 68K |
| 代理商： | PHX14NQ20T |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PHX14NQ20T , PHF14NQ20T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
14
A
-
-
56
A
I
F
= 14 A; V
GS
= 0 V
I
F
= 14 A; -dI
F
/dt = 100 A/
μ
s;
V
GS
= 0 V; V
R
= 30 V
-
-
-
1.0
135
690
1.5
-
-
V
ns
nC
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from pin 2 to
external heatsink
CONDITIONS
SOT186A package; f = 50-60 Hz;
sinusoidal waveform; R.H.
≤
65%;
clean and dustfree
SOT186 package; R.H.
≤
65%;
clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
1500
V
f = 1 MHz
-
10
-
pF
November 2000
3
Rev 1.100
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PDF描述 |
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| PHF14NQ20T | N-channel TrenchMOS transistor |
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| PHX4N40E | PowerMOS transistors Avalanche energy rated |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHX14NQ20T,127 | 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHX15N06E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of PHP20N06E |
| PHX1881406 | 制造商:Phoenix Contact 功能描述: |
| PHX1881590 | 制造商:Phoenix Contact 功能描述: |
| PHX1881639 | 制造商:Phoenix Contact 功能描述: |
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