參數(shù)資料
型號: PHW8ND50E
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistors FREDFET, Avalanche energy rated
中文描述: 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù): 9/10頁
文件大?。?/td> 91K
代理商: PHW8ND50E
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHP8ND50E, PHB8ND50E, PHW8ND50E
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.22. SOT429; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
5.3
4.0
max
21
max
15.5
min
1
2.2 max
3.2 max
0.4
2.5
0.9 max
5.3 max
3.5
16 max
5.45
seating
plane
5.45
M
o
15.5
max
2
3
1.1
3.5
max
1.8
7.3
August 1998
9
Rev 1.100
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