參數(shù)資料
型號(hào)： PHW8ND50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors FREDFET, Avalanche energy rated
中文描述： 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 91K
代理商： PHW8ND50E
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHP8ND50E, PHB8ND50E, PHW8ND50E
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 500 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 4.8 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 4.8 A
-
0.7
3.0
6
1
40
10
88
6
47
18
50
104
60
3.5
4.5
0.85
4.0
-
25
250
200
110
7
60
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
I
D
= 8.5 A; V
DD
= 400 V; V
GS
= 10 V
V
DD
= 250 V; R
D
= 30
;
R
G
= 9.1
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 and SOT429 packages only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1060
160
90
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
8.5
A
T
mb
= 25C
-
-
34
A
I
S
= 8.5 A; V
GS
= 0 V
I
S
= 8.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
I
= 8.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s;
125C
I
S
= 8.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
I
= 8.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s;
125C
I
= 8.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s;
125C
-
-
-
-
1.5
-
-
V
ns
ns
180
220
Q
rr
Reverse recovery charge
-
-
0.65
2.6
-
-
μ
C
μ
C
I
rrm
Peak reverse recovery
current
-
15
-
A
August 1998
3
Rev 1.100
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