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參數(shù)資料
| 型號(hào)： | PHP83N06T |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TrenchMOS Standard Level FET |
| 中文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大小： | 263K |
| 代理商： | PHP83N06T |
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Philips Semiconductors
PHP83N06T
TrenchMOS Standard Level FET
Product data
Rev. 01 — 11 January 2002
6 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C and 175
°
C; V
DS
>
I
D
×
R
DSon
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag67
0
20
40
60
80
0
0.4
0.8
1.2
1.6
2
V
DS
(V)
I
D
(A)
7 V
T
j
= 25 oC
V
GS
= 4.5 V
10 V
5.5 V
5 V
6 V
03afg69
0
20
40
60
80
0
2
4
6
8
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 oC
175 oC
03ag68
0
0.005
0.01
0.015
0.02
0
20
40
60
80
I
D
(A)
R
DSon
(
)
T
j
= 25 oC
10 V
7 V
V
GS
= 6 V
03aa28
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
T
j
(
o
C)
a
a
R
DSon 25 C
°
)
---------------------------
=
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