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參數(shù)資料
| 型號(hào)： | PHP83N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS Standard Level FET |
| 中文描述： | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大小： | 263K |
| 代理商： | PHP83N06T |
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Philips Semiconductors
PHP83N06T
TrenchMOS Standard Level FET
Product data
Rev. 01 — 11 January 2002
2 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
Typ
-
-
-
-
Max
60
75
166
175
Unit
V
A
W
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
°
C
T
j
= 175
°
C
9
-
12
24
m
m
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
Min
-
-
-
-
-
-
-
55
55
Max
60
60
±
20
75
59
240
166
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
R
GS
= 20 k
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
DR
reverse drain current (DC)
I
DRM
pulsed reverse drain current
Avalanche ruggedness
E
DS(AL)
non-repetitive avalanche energy
peak drain current
total power dissipation
storage temperature
operating junction temperature
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
75
240
A
A
unclamped inductive load; I
D
= 65 A;
V
DS
≤
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
°
C
-
211
mJ
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