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參數(shù)資料
| 型號： | PHP69NLT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | TrenchMOS晶體管邏輯電平場效應(yīng)管 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 78K |
| 代理商： | PHP69NLT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP69N03LT, PHB69N03LT, PHD69N03LT
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
0.1
1
10
100
100
1000
10000
9514-30
Drain-source volage, VDS (V)
Capacitances, Ciss, Coss, Crss (pF)
Ciss
Coss
Crss
BUK959-60
-100
-50
0
50
100
150
200
0
0.5
1
1.5
2
2.5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
10
20
30
Qg, Gate charge (nC)
40
50
60
70
80
0
5
10
15
PHP69N03LT
VGS, Gate-Source voltage (Volts)
VDD=24V
ID=20A
Tj = 25C
0
0.5
1
1.5
2
2.5
3
1E-05
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
2%
typ
98%
0
0.5
1
1.5
2
0
20
40
60
80
100
9514-30
VSDS / V
IF / A
Tj / C = 175
25
June 1998
5
Rev 1.400
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