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| 型號： | PHP69NLT |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TrenchMOS transistor Logic level FET |
| 中文描述： | TrenchMOS晶體管邏輯電平場效應(yīng)管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 78K |
| 代理商： | PHP69NLT |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Logic level FET
PHP69N03LT, PHB69N03LT, PHD69N03LT
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C
g
fs
= f(I
D
)
1
10
100
1
10
100
1000
7514-30
tp = 10 us
100 us
1 ms
10 ms
100 ms
DC
RDS(ON) = VDS / ID
Tmb = 25 C
VDS, Drain-source voltage (Volts)
ID, Drain current (Amps)
0
10
20
30
40
PHP69N03LT
50
0
0.01
0.02
0.03
0.05
0.06
ID, Drain current (Amps)
RDS(on), Drain-Source on resistance (Ohms)
VGS = 15 V
10 V
5 V
3.2 V
3 V
2.8 V
2.6 V
Tj = 25 C
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx55-lv
D =
D =
t
p
t
p
T
T
P
D
t
0
1
2
3
4
5
0
10
20
30
40
50
PHP69N03LT
Gate-source voltage, VGS (V)
Drain current, ID (A)
Tj = 25 C
175 C
VDS > RDS(ON) x ID
0
1
2
3
4
5
0
10
20
30
40
50
PHP69N03LT
VDS, Drain-Source voltage (Volts)
ID, Drain current (Amps)
15V
10 V
VGS = 2.2 V
2.4 V
2.6 V
2.8 V
3 V
3.2 V
5 V
Tj = 25 C
0
10
20
Drain current, ID (A)
30
40
50
0
10
20
30
40
50
PHP69N03LT
Tj = 25 C
Transconductance, gfs (S)
175 C
VDS > RDS(ON) x ID
June 1998
4
Rev 1.400
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