參數(shù)資料
型號(hào): PHP1025
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: P-channel enhancement mode MOS transistor
中文描述: 10000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SOT96-1, SMD, SO-8
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 51K
代理商: PHP1025
1998 Feb 18
4
Philips Semiconductors
Objective specification
P-channel enhancement mode
MOS transistor
PHP1025
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
12
0.4
TYP.
tbf
tbf
tbf
tbf
MAX.
100
±
100
23
25
29
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
=
10
μ
A
V
GS
= V
DS
; I
D
=
1 mA
V
GS
= 0; V
DS
=
9.6 V
V
GS
=
±
8 V; V
DS
= 0
V
GS
=
4.5 V; I
D
=
5 A
V
GS
=
2.5 V; I
D
=
5 A
V
GS
=
1.8 V; I
D
=
2.5 A
V
GS
= 0; V
DS
=
9.6 V; f = 1 MHz
V
GS
= 0; V
DS
=
9.6 V; f = 1 MHz
V
GS
= 0; V
DS
=
9.6 V; f = 1 MHz
V
GS
=
6 V; V
DD
=
6 V;
I
D
=
5 A; T
amb
= 25
°
C
V
DD
=
6 V; I
D
=
5 A
T
amb
= 25
°
C
V
DD
=
6 V; I
D
=
5 A
T
amb
= 25
°
C
V
V
nA
nA
m
m
m
pF
pF
pF
pC
C
iss
C
oss
C
rss
Q
G
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
Q
GS
gate-source charge
tbf
pC
Q
GD
gate-drain charge
tbf
pC
Switching times
t
d(on)
t
f
t
on
t
d(off)
t
r
t
off
turn-on delay time
fall time
turn-on switching time
turn-off delay time
rise time
turn-off switching time
V
GS
= 0 to
6 V; V
DD
=
6 V;
I
D
=
1 A; R
gen
= 6
tbf
tbf
tbf
tbf
tbf
tbf
ns
ns
ns
ns
ns
ns
V
GS
=
6 to 0 V; V
DD
=
6 V;
I
D
=
1 A; R
gen
= 6
Source-drain diode
V
SD
t
rr
source-drain diode forward voltage V
GD
= 0; I
S
=
1.25 A
reverse recovery time
tbf
1.3
V
ns
I
S
=
1.25 A; di/dt = 100 A/
μ
s
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