參數(shù)資料
型號(hào)： PHP10N40
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： CAP 1000PF 100V 1% NP0(C0G) DIP-2 TUBE-PAK S-MIL-PRF-39014/22
中文描述： 10.7 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁(yè)數(shù)： 1/7頁(yè)
文件大?。?/td> 54K
代理商： PHP10N40
Philips Semiconductors
Product specification
PowerMOS transistor
PHP10N40
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
field-effect power transistor in a
plastic
envelope
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance.Intended
for use in Switched Mode Power
Supplies
(SMPS),
circuits
and
general
switching applications.
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
featuring
high
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
400
10.7
147
0.55
V
A
W
motor
control
purpose
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
I
D
Continuous drain current
CONDITIONS
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
T
mb
> 25 C
MIN.
-
-
-
-
-
-
-
MAX.
10.7
6.7
43
147
1.176
±
30
520
UNIT
A
A
A
W
W/K
V
mJ
I
DM
P
D
P
D
/
T
mb
Linear derating factor
V
GS
Gate-source voltage
E
AS
Single pulse avalanche
energy
I
AS
Peak avalanche current
Pulsed drain current
Total dissipation
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
V
DD
≤
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
-
10
A
T
j
, T
stg
Operating junction and
storage temperature range
- 55
150
C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
0.85
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
March 1997
1
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PHP10N40E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
PHP10N60E 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated
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PHP110NQ06LT,127 功能描述:MOSFET TRENCHMOS (TM)FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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