參數(shù)資料
型號: PHP112N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 1/14頁
文件大?。?/td> 262K
代理商: PHP112N06T
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Rev. 01 — 07 March 2001
Product specification
c
c
1.
Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS
1
technology.
Product availability:
PHP112N06T in SOT78 (TO-220AB)
PHB112N06T in SOT404 (D
2
-PAK).
2.
Features
I
Fast switching
I
Very low on-state resistance.
3.
Applications
I
General purpose switching
I
Switched mode power supplies.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pin
Pinning - SOT78 and SOT404, simplified outline and symbol
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2-
PAK)
2
drain (d)
[1]
3
source (s)
mb
mounting base;
connected to
drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
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