參數(shù)資料
型號: PHP112N06T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 4/14頁
文件大?。?/td> 262K
代理商: PHP112N06T
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 — 07 March 2001
4 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Conditions
Figure 5
Value
0.75
Unit
K/W
R
th(j-a)
SOT78 package; vertical in still air
SOT404 package; mounted on
printed circuit board; minimum
footprint.
60
50
K/W
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
tp
tp
T
T
P
t
δ
=
Single Pulse
δ
= 0.5
0.2
0.1
0.05
0.02
Zth (j-mb)
(K/W)
10
1
10-1
10-2
10-3
10
1
10-1
10-2
10-3
10-4
10-5
10-6
10-7
tp(s)
003aaa070
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