參數(shù)資料
型號: PHN405
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 4 N-channel 60 mohm FET array enhancement mode MOS transistors
中文描述: 3700 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AC
文件頁數(shù): 7/12頁
文件大小: 94K
代理商: PHN405
1998 Mar 17
7
Philips Semiconductors
Product specification
4 N-channel 60 m
FET array
enhancement mode MOS transistors
PHN405
Fig.6
Gate-source voltage as a function of total
gate charge; typical values.
V
DD
= 15 V; I
D
= 1 A; T
amb
= 25
°
C.
handbook, halfpage
(V)
0
2
4
QG (nC)
8
0
8
6
6
4
2
MDA799
Fig.7
Output characteristics; typical values.
T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
(1) V
GS
= 10 V.
(2) V
GS
= 7.5 V.
(3) V
GS
= 6 V.
(4) V
GS
= 5 V.
(5) V
GS
= 4.5 V.
(6) V
GS
= 4 V.
(7) V
GS
= 3.5 V.
(8) V
GS
= 3 V.
handbook, halfpage
(A)
0
10
0
4
8
12
16
2
4
6
8
MDA807
VDS (V)
(8)
(1)(2)
(3)
(7)
(4)
(5)
(6)
Fig.8 Transfer characteristic; typical values.
V
DS
= 10 V; T
amb
= 25
°
C; t
p
= 80
μ
s;
δ
= 0.
handbook, halfpage
ID
(A)
0
2
VGS (V)
4
6
12
4
0
8
MDA798
Fig.9
Capacitance as a function of drain-source
voltage; typical values.
V
GS
= 0 ; f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
(pF)
0
25
0
100
200
300
400
5
10
15
20
MDA806
VDS (V)
Crss
Ciss
Coss
相關(guān)PDF資料
PDF描述
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