參數(shù)資料
型號： PHN405
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 4 N-channel 60 mohm FET array enhancement mode MOS transistors
中文描述： 3700 mA, 30 V, 4 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MO-150AC
文件頁數(shù)： 5/12頁
文件大?。?/td> 94K
代理商： PHN405
1998 Mar 17
5
Philips Semiconductors
Product specification
4 N-channel 60 m
FET array
enhancement mode MOS transistors
PHN405
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per FET
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
= 10
μ
A
V
GS
= V
DS
; I
D
= 1 mA
V
GS
= 0; V
DS
= 24 V
V
GS
=
±
20 V; V
DS
= 0
V
GS
= 4.5 V; I
D
= 1 A
V
GS
= 10 V; I
D
= 2 A
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
V
GS
= 10 V; V
DD
= 15 V; I
D
= 1 A
V
DD
= 15 V; I
D
= 1 A;
V
DD
= 15 V; I
D
= 1 A;
30
1
230
90
50
7.1
0.5
2.4
2.8
100
±
100
120
60
10
V
V
nA
nA
m
m
pF
pF
pF
nC
nC
nC
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
input capacitance
output capacitance
reverse transfer capacitance
total gate charge
gate-source charge
gate-drain charge
Switching times
t
d(on)
turn-on delay time
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 0 to 10 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
V
GS
= 10 to 0 V; V
DD
= 20 V;
I
D
= 1 A; R
gen
= 6
3.5
ns
t
f
fall time
3.5
ns
t
on
turn-on switching time
7
10
ns
t
d(off)
turn-off delay time
12
ns
t
r
rise time
8
ns
t
off
turn-off switching time
20
30
ns
Current monitor
R
DMon
on-state drain-monitor resistance
V
GM
= 10 V; I
D
= 25 mA; I
S
= 0
V
GM
= 4.5 V; I
D
= 12 mA; I
S
= 0
V
GS
= 10 V; I
D
= 2 A; V
MS
= 0
V
GM
= V
MS
= 0; V
DS
= 24 V;
f = 1 MHz
66.7
1.35
4
8
I
S
/I
M
C
Moss
source to monitor current ratio
output capacitance of monitor cells
pF
Source-drain diode
V
SD
t
rr
source-drain diode forward voltage
reverse recovery time
V
GD
= 0; I
S
= 1.25 A
I
S
= 1.25 A; di/dt =
100 A/
μ
s
25
1
V
ns
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