參數(shù)資料
型號(hào)： PHD10N10E
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： JFETs
英文描述： PowerMOS transistor(功率MOS晶體管)
中文描述： 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁(yè)數(shù)： 4/7頁(yè)
文件大小： 76K
代理商： PHD10N10E
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD10N10E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 5.5 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
BUK452-100A
VGS / V
ID / A
20
16
12
8
4
0
Tj / C =
25
150
-60
-20
20
60
Tj / C
100
140
180
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
2
4
6
8
10
12
14
16
18
BUK452-100A
ID / A
gfs / S
5
4
3
2
1
0
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0
20
40
VDS / V
C / pF
Ciss
Coss
Crss
10
100
1000
10000
BUK4y2-100
September 1997
4
Rev 1.000
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