參數(shù)資料
型號： PHD10N10E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistor(功率MOS晶體管)
中文描述： 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, SOT-428, 3 PIN
文件頁數(shù)： 6/7頁
文件大小： 76K
代理商： PHD10N10E
Philips Semiconductors
Product Specification
PowerMOS transistor
PHD10N10E
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
Fig.17. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.18. SOT428 : soldering pattern for surface mounting
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
tab
0.3
0.5
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
7.0
7.0
2.15
2.5
4.57
1.5
September 1997
6
Rev 1.000
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相關代理商/技術參數(shù)
參數(shù)描述
PHD110NQ03LT,118 功能描述:MOSFET TRENCH<=30 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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PHD-128-4002-BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING 50.8MM ID PO BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 制造商:pro-power 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 8FT, PK2; I.D. Supplied - Metric:50.8mm; I.D. Supplied - Imperial:2"; I.D. Recovered Max - Metric:25.4mm; I.D. Recovered Max - Imperial:1"; Shrink Ratio:2:1; Shrink Tubing / Boot Color:Black ;RoHS Compliant: Yes
PHD-128-6002-BLK 制造商:PRO POWER (FORMERLY FROM SPC) 功能描述:HEAT SHRINK TUBING BLK 制造商:pro-power 功能描述:HEAT SHRINK TUBING, 50.8MM ID, PO, BLK, 1FT, PK2; I.D. Supplied - Metric:50.8mm; I.D. Supplied - Imperial:2"; I.D. Recovered Max - Metric:25.4mm; I.D. Recovered Max - Imperial:1"; Shrink Ratio:2:1; Shrink Tubing / Boot Color:Black ;RoHS Compliant: Yes
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