- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367942 > PHB8ND50E (NXP SEMICONDUCTORS) PowerMOS transistors FREDFET, Avalanche energy rated PDF資料下載
參數(shù)資料
| 型號： | PHB8ND50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors FREDFET, Avalanche energy rated |
| 中文描述： | 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 91K |
| 代理商： | PHB8ND50E |
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHP8ND50E, PHB8ND50E, PHW8ND50E
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 4.25 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
VGS, Gate-Source voltage (Volts)
4
6
8
10
0
5
10
15
20
25
PHP8N50
ID, Drain current (Amps)
VDS > ID x RDS(on)max
Tj = 25 C
Tj = 150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
5
10
15
20
25
0
2
4
6
8
10
PHP8N50
ID, Drain current (A)
gfs, Transconductance (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
1
10
100
1000
10
100
1000
10000
PHP8N50
VDS, Drain-Source voltage (Volts)
Junction capacitances (pF)
Ciss
Coss
Crss
August 1998
5
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| PHP98N03LT | N-channel enhancement mode field-effect transistor |
| PHB98N03LT | N-channel enhancement mode field-effect transistor |
| PHD98N03LT | N-channel enhancement mode field-effect transistor |
| PHS6901 | Switched Capacitor Regulated Voltage Inverter; Package: SO; No of Pins: 8; Temperature Range: 0°C to +70°C |
| PHS6905 | Transimpedance Amplifier |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHB95N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor |
| PHB95N03LTA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 22V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB95NQ04LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS logic level FET |
| PHB95NQ04LT,118 | 功能描述:MOSFET TRENCHMOS (TM) FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB96NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。