參數(shù)資料
型號(hào)： PHB8ND50E
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： PowerMOS transistors FREDFET, Avalanche energy rated
中文描述： 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 91K
代理商： PHB8ND50E
Philips Semiconductors
Product specification
PowerMOS transistors
FREDFET, Avalanche energy rated
PHP8ND50E, PHB8ND50E, PHW8ND50E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 6.2 A;
t
p
= 0.18 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
510
UNIT
mJ
E
AR
Repetitive avalanche energy
2
I
= 8.5 A; t
= 1
μ
s; T
prior to
-
19
mJ
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
I
AS
, I
AR
Repetitive and non-repetitive
avalanche current
-
8.5
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.85
K/W
SOT78 package, in free air
SOT429 package, in free air
SOT404 package, pcb mounted, minimum
footprint
-
-
-
60
45
50
-
-
-
K/W
K/W
K/W
2
pulse width and repetition rate limited by T
j
max.
August 1998
2
Rev 1.100
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