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參數(shù)資料
| 型號(hào)： | PHB80N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | PHB80N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHB80N06T
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
BUK759-60
0
-50
0
50
100
150
200
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
gfs/S
ID/A
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0.01
0.1
1
10
100
0
5
1
1.5
2
2.5
3
3.5
4
T
VDS/V
Ciss
Coss
Crss
December 1997
5
Rev 1.100
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