- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367938 > PHB80N06T (NXP SEMICONDUCTORS) TrenchMOS transistor Standard level FET PDF資料下載
參數(shù)資料
| 型號： | PHB80N06T |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | 75 A, 55 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 70K |
| 代理商： | PHB80N06T |
Philips Semiconductors
Product specification
TrenchMOS
transistor
Standard level FET
PHB80N06T
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
-
TYP.
-
MAX.
0.84
UNIT
K/W
R
th j-a
Minimum footprint, FR4
board
50
-
K/W
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
55
50
2
1
-
-
-
-
-
16
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
UNIT
V
V
V
V
V
μ
A
μ
A
μ
A
μ
A
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
T
j
= 175C
I
GSS
Gate source leakage current
V
GS
=
±
10 V; V
DS
= 0 V
T
j
= 175C
±
V
(BR)GSS
Gate-source breakdown
voltage
Drain-source on-state
resistance
I
G
=
±
1 mA;
R
DS(ON)
V
GS
= 10 V; I
D
= 25 A
-
-
12
-
14
30
m
m
T
j
= 175C
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
g
fs
Forward transconductance
Q
g(tot)
Total gate charge
Q
gs
Gate-source charge
Q
gd
Gate-drain (Miller) charge
C
iss
Input capacitance
C
oss
Output capacitance
C
rss
Feedback capacitance
t
d on
Turn-on delay time
t
r
Turn-on rise time
t
d off
Turn-off delay time
t
f
Turn-off fall time
L
d
Internal drain inductance
CONDITIONS
V
DS
= 25 V; I
D
= 25 A
I
D
= 50 A; V
DD
= 44 V; V
GS
= 10 V
MIN.
8
-
-
-
-
-
-
-
-
-
-
TYP.
39
49
15
19
2200
500
200
18
35
45
30
MAX.
-
-
-
-
2900
600
270
26
85
60
45
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
V
DD
= 30 V; I
D
= 25 A;
V
= 10 V; R
G
= 10
Resistive load
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
-
2.5
-
nH
L
s
Internal source inductance
-
7.5
-
nH
December 1997
2
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PHB87N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| PHD87N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| PHP87N03LT | N-channel TrenchMOS transistor Logic level FET(N溝道TrenchMOS 晶體管邏輯電平場效應管) |
| PHB87N03T | TrenchMOS transistor Standard Level FET(TrenchMOS 晶體管標準電平場效應管) |
| PHB8N50E | PowerMOS transistors Avalanche energy rated |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB80N06TT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 75A I(D) | SOT-404 |
| PHB82NQ03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS⑩ logic level FET |
| PHB83N03LT | 制造商:PHILLIPS COMPONENTS 功能描述: |
| PHB87N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHB87N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SOT-404 |
發(fā)布緊急采購，3分鐘左右您將得到回復。