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參數(shù)資料
| 型號(hào)： | PHB6N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 77K |
| 代理商： | PHB6N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N50E, PHB6N50E
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
0
10
20
30
40
50
60
70
80
0
5
10
15
PHP4N50
Qg, Gate charge (nC)
VGS, Gate-Source voltage (Volts)
ID = 6 A
Tj = 25 C
250 V
VDD = 400 V
100 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP4N50
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
150 C
Tj = 25 C
0
10
20
30
40
50
60
1
10
100
1000
tr
PHP4N50
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 250 V
Tj = 25 C
RD = 39 Ohms
VGS = 10 V
td(on)
td(off)
tf
PHP6N50E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP6N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
December 1998
6
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PHB6N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB6N60T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | SOT-404 |
| PHB6ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB71NQ03LT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB71NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D2-PAK |
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