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參數(shù)資料
| 型號： | PHB6N50E |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistors Avalanche energy rated |
| 中文描述： | 5.9 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-404, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 77K |
| 代理商： | PHB6N50E |
Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHP6N50E, PHB6N50E
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 500 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 3 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 3 A
-
1.2
3.0
3.6
1
30
10
53
4
28
10
33
92
40
3.5
4.5
1.5
4.0
-
25
250
200
64
6
34
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
2.0
2
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
I
D
= 6 A; V
DD
= 400 V; V
GS
= 10 V
V
DD
= 250 V; R
D
= 39
;
R
G
= 12
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
610
96
54
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
5.9
A
T
mb
= 25C
-
-
24
A
I
S
= 6 A; V
GS
= 0 V
I
S
= 6 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
390
4
December 1998
3
Rev 1.200
相關PDF資料 |
PDF描述 |
|---|---|
| PHP6N60E | PowerMOS transistors Avalanche energy rated |
| PHB6N60E | PowerMOS transistors Avalanche energy rated |
| PHP6NA60E | PowerMOS transistors Low capacitance Avalanche energy rated |
| PHP6ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB6ND50E | PowerMOS transistors FREDFET, Avalanche energy rated |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PHB6N60E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors Avalanche energy rated |
| PHB6N60T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 7A I(D) | SOT-404 |
| PHB6ND50E | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistors FREDFET, Avalanche energy rated |
| PHB71NQ03LT | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB |
| PHB71NQ03LT | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V D2-PAK |
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