參數(shù)資料
型號： PH1214-110M
英文描述： Radar Pulsed Power Transistor - 110 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty
中文描述： 雷達脈沖功率晶體管- 110瓦特,1.20 - 1 .40千兆赫，150毫秒脈沖，10％的稅
文件頁數(shù)： 1/2頁
文件大?。?/td> 52K
代理商： PH1214-110M
Radar Pulsed Power Transistor 110 Watts, 1.20-1.40 GHz, 150
μ
s Pulse, 10% Duty
PH1214-110M
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Electrical Specifications at 25°C
Symbol
Parameter
BV
CES
Collector-Emitter Breakdown
I
CES
Collector-Emitter Breakdown
R
TH(JC)
Thermal Resistance
P
O
Output Power
G
P
Power Gain
η
Collector Efficiency
R
L
Input Return Loss
VSWR-T
Load Mismatch Tolerance
VSWR-S
Load Mismatch Stability
Radar Pulsed Power Transistor - 110 Watts,
1.20-1.40 GHz, 150
μ
s Pulse, 10% Duty
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
Rating
70
3.0
10.5
300
Units
V
V
A
W
T
stg
T
j
-65 to +200
200
°C
°C
Broadband Test Fixture Impedance
f (GHz)
1.20
1.30
1.40
Z
IF
(
)
4.7 - j4.4
4.5 - j3.3
4.5 - j2.3
Z
OF
(
)
4.4 - j3.3
3.0 - j2.8
2.3 - j1.8
Test Conditions
Min
70
-
-
110
7.4
50
9
-
-
Max
-
5.5
0.50
-
-
-
-
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
I
C
= 50 mA
V
CE
= 40 V
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 40 V, P
in
= 20 W, f = 1.2, 1.3, 1.4 GHz
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM’s PH1214-110M is a silicon bipolar NPN power
transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radars
such as air traffic control and long-range weather radars. De-
signed for common-base, class C, broadband pulsed power
applications, the PH1214-110M can produce 110 watts of output
power with medium pulse length (150μS) at 10 percent duty
cycle. The transistor is housed in a 2-lead rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. Diffused emitter ballast resis-
tors and gold metalization assure ruggedness and long-term
reliability.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH1214-110M_07 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 110W, 1.2-1.4 GHz, 150μs Pulse, 10% Duty
PH1214-12M 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 60V 2PIN HERMETIC METAL - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
PH1214-20EL 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
PH1214-20EL_1 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Radar Pulsed Power Transistor 20W, 1.2-1.4 GHz, 2ms Pulse, 10% Duty
PH1214-220M 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 70V 2PIN HERMETIC METAL - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
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