參數(shù)資料
型號(hào)： PH1214-25M
英文描述： Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150mS Pulse, 10% Duty
中文描述： 雷達(dá)脈沖功率晶體管- 25瓦特，1.20-1.40千兆赫，150毫秒脈沖，10％的稅
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 48K
代理商： PH1214-25M
Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150
μ
s Pulse, 10% Duty
PH1214-25M
M/A-COM Division of AMP Incorporated North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
V2.00
Features
NPN Silicon Microwave Power Transistor
Common Base Configuration
Broadband Class C Operation
High Efficiency Interdigitated Geometry
Diffused Emitter Ballasting Resistors
Gold Metalization System
Internal Input and Output Impedance Matching
Hermetic Metal/Ceramic Package
Outline Drawing
1
Notes: (unless otherwise specified)
1. Tolerances are: inches ± .005” (millimeters ± 0.13mm)
Electrical Specifications at 25°C
Symbol
Parameter
BV
CES
Collector-Emitter Breakdown
I
CES
Collector-Emitter Breakdown
R
TH(JC)
Thermal Resistance
P
IN
Input Power
G
P
Power Gain
η
Collector Efficiency
R
L
Input Return Loss
VSWR-T
Load Mismatch Tolerance
VSWR-S
Load Mismatch Stability
Radar Pulsed Power Transistor - 25 Watts,
1.20-1.40 GHz, 150
μ
S Pulse, 10% Duty
Absolute Maximum Rating at 25°C
Parameter
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (Peak)
Total Power Dissipation
@ +25°C
Storage Temperature
Junction Temperature
Symbol
V
CES
V
EBO
I
C
P
TOT
Rating
60
3.0
2.8
58
Units
V
V
A
W
T
stg
T
j
-65 to +200
200
°C
°C
Broadband Test Fixture Impedance
F (GHz)
1.20
1.30
1.40
Z
IF
(
)
2.1 - j4.5
2.1 - j3.9
2.2 - j3.4
Z
OF
(
)
3.7 + j0.9
3.6 + j0.4
3.0 + j0.2
Test Conditions
Min
60
-
-
-
9.5
50
6
-
-
Max
-
2.5
2.6
2.8
-
-
-
3:1
1.5:1
Units
V
mA
°C/W
W
dB
%
dB
-
-
I
C
= 25 mA
V
CE
= 40 V
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
V
CC
= 28 V, P
o
= 25 W, f = 1.2, 1.3, 1.4 GHz
TEST FIXTURE
INPUT
CIRCUIT
ZIF
TEST FIXTURE
OUTPUT
CIRCUIT
ZOF
50
50
Description
M/A-COM’s PH1214-25M is a silicon bipolar NPN power
transistor designed for use in L-band, 1.2 - 1.4 GHz pulsed
radars such as air traffic control and long-range weather radars.
Designed for common-base, class C, broadband pulsed power
applications, the PH1214-25M can produce 25 watts of output
power with medium pulse length (150 μS) at 10 percent duty
cycle. The transistor is housed in a 2-lead, rectangular metal-
ceramic flange package, with internal input and output
impedance matching networks. In addition to L-band pulsed
radars, this high performance transistor can also be used in
pulsed digital communication systems.
相關(guān)PDF資料
PDF描述
PH1214-2M CAP CERAMIC .55PF 25V C0G 0402
PH1214-300M Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty
PH1214-40M Radar Pulsed Power Transistor - 40 Watts,1.20-1.40 GHz, 150ms Pulse, 10% Duty
PH1214-4M Radar Pulsed Power Transistor, 4W, loops Pulse, 10% Duty 1.2 - 1.4 GHz
PH1214-6M RADAR PULSED POWER TRANSISTOR, 6W, 100us PULSE, 10% DUTY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PH1214-25S 功能描述:射頻雙極電源晶體管 RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray
PH1214-2M 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 65V 2PIN HERMETIC METAL - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
PH1214-30 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 3A I(C) | FO-53
PH1214-300M 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 90V 2PIN HERMETIC METAL - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
PH1214-30EL 制造商:M/A-COM Technology Solutions 功能描述:TRANS GP BJT NPN 56V 2PIN HERMETIC METAL - Bulk 制造商:M/A-COM Technology Solutions 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*