參數(shù)資料
型號(hào)： PH1214-300M
英文描述： Radar Pulsed Power Transistor, 300 Watts,1.20-1.40 GHz, 150 mS Pulse, 10% Duty
中文描述： 雷達(dá)脈沖功率晶體管，300瓦,1.20 - 1 .40千兆赫，150毫秒脈沖，10％的稅
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 248K
代理商： PH1214-300M
Radar Pulsed Power Transistor, 300 Watts,
1.20-1.40 GHz, 150
μ
S Pulse, 10% Duty
Features
Q
NPN Silicon Microwave Power Transistor
Q
Common Base Configuration
Q
Broadband Class C Operation
Q
High Efficiency Interdigitated Geometry
Q
Gold Metalization System
Q
Internal Input and Output Impedance Matching
Q
Hermetic Metal/Ceramic Package
P
Outline Drawing
12/06/01
Rev. 0
Electrical Characteristics @ 25 °C
Parameter
Symbol
Min.
Max.
Units
Test Conditions
Collector-Emitter Breakdown
Voltage
BV
CES
90
-
V
I
C
=80 mA
Collector-Emitter Leakage
Current
I
CES
-
10
mA
V
CE
=40 V
Thermal Resistance
R
TH(JC)
-
.25
°C/W
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Output Power
P
O
300
-
W
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Power Gain
G
P
8.75
-
dB
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Collector Efficiency
η
50
-
%
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Input Return Loss
RL
10
-
dB
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Tolerance
VSWR-T
-
2:1
-
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Load Mismatch Stability
VSWR-S
-
1.5:1
-
V
CC
=40 V, P
in
= 40 W, Freq= 1.2, 1.3 and 1.4 GHz
Absolute Maximum Ratings @ 25 °C
Parameter
Symbol
Rating
Units
Collector-Emitter Voltage
V
CES
90
V
Emitter-Base Voltage
V
EBO
3.0
V
Collector Current (Peak)
I
C
21.0
A
Total Power Dissipation
@ +45 °C
Storage Temperature
P
TOT
620
W
T
STG
-65 to +200
°C
Junction Temperature
T
j
200
°C
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