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| 型號(hào)： | PF48F4P0VB00 |
| 廠商： | Intel Corp. |
| 英文描述： | Photoelectric Sensor; Sensor Input Type:Optical; Sensing Range Max:43mm; Sensor Output Type:Relay; Leaded Process Compatible:No; Output Type:Relay; Peak Reflow Compatible (260 C):No; Contact Current Max:3A; Contact Rating:3A |
| 中文描述： | 英特爾StrataFlash嵌入式存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 50/102頁(yè) |
| 文件大小： | 1609K |
| 代理商： | PF48F4P0VB00 |
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1-Gbit P30 Family
April 2005
50
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
Datasheet
9.2
Device Commands
Device operations are initiated by writing specific device commands to the Command User
Interface (CUI). See
Table 20, “Command Bus Cycles” on page 50
. Several commands are used to
modify array data including Word Program and Block Erase commands. Writing either command
to the CUI initiates a sequence of internally
-
timed functions that culminate in the completion of the
requested task. However, the operation can be aborted by either asserting RST# or by issuing an
appropriate suspend command.
Table 20.
Command Bus Cycles (Sheet 1 of 2)
Mode
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
(1)
Data
(2)
Oper
Addr
(1)
Data
(2)
Read
Read Array
1
Write
DBA
0xFF
-
-
-
Read Device Identifier
≥
2
Write
DBA
0x90
Read
DBA + IA
ID
CFI Query
≥
2
Write
DBA
0x98
Read
DBA + QA
QD
Read Status Register
2
Write
DBA
0x70
Read
DBA
SRD
Clear Status Register
1
Write
DBA
0x50
-
-
-
Program
Word Program
2
Write
WA
0x40/
0x10
Write
WA
WD
Buffered Program
(3)
>
2
Write
WA
0xE8
Write
WA
N - 1
Buffered Enhanced Factory
Program (BEFP)
(4)
>
2
Write
WA
0x80
Write
WA
0xD0
Erase
Block Erase
2
Write
BA
0x20
Write
BA
0xD0
Suspend
Program/Erase Suspend
1
Write
DBA
0xB0
-
-
-
Program/Erase Resume
1
Write
DBA
0xD0
-
-
-
Block
Locking/
Unlocking
Lock Block
2
Write
BA
0x60
Write
BA
0x01
Unlock Block
2
Write
BA
0x60
Write
BA
0xD0
Lock-down Block
2
Write
BA
0x60
Write
BA
0x2F
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PF48F0P0VT00 | Intel StrataFlash Embedded Memory |
| PF48F2P0VT00 | Intel StrataFlash Embedded Memory |
| PF48F3P0VT00 | Intel StrataFlash Embedded Memory |
| PF48F4P0VT00 | Intel StrataFlash Embedded Memory |
| PF48F0P0ZB00 | Intel StrataFlash Embedded Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PF48F4P0VBQ0 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0VT00 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0VTQ0 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0ZB00 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
| PF48F4P0ZBQ0 | 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:Intel StrataFlash Embedded Memory |
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