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參數資料
| 型號： | PF48F3P0ZTQ0 |
| 廠商： | Intel Corp. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:12-10 |
| 中文描述： | 英特爾StrataFlash嵌入式存儲器 |
| 文件頁數： | 51/102頁 |
| 文件大?。?/td> | 1609K |
| 代理商： | PF48F3P0ZTQ0 |
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1-Gbit P30 Family
Datasheet
Intel StrataFlash
Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
51
9.3
Command Definitions
Valid device command codes and descriptions are shown in
Table 21
.
Protection
Program Protection Register
2
Write
PRA
0xC0
Write
PRA
PD
Program Lock Register
2
Write
LRA
0xC0
Write
LRA
LRD
Configuration
Program Read Configuration
Register
2
Write
RCD
0x60
Write
RCD
0x03
Notes:
1.
First command cycle address should be the same as the operation’s target address.
DBA = Device Base Address (NOTE: needed for 2 or more die stacks)
IA = Identification code address offset.
QA = CFI Query address offset.
WA = Word address of memory location to be written.
BA = Address within the block.
PRA = Protection Register address.
LRA = Lock Register address.
RCD = Read Configuration Register data on A[15:0].
ID = Identifier data.
QD = Query data on DQ[15:0].
SRD = Status Register data.
WD = Word data.
N = Word count of data to be loaded into the write buffer.
PD = Protection Register data.
LRD = Lock Register data.
The second cycle of the Buffered Program Command is the word count of the data to be loaded into the write buffer. This
is followed by up to 32 words of data.Then the confirm command (0xD0) is issued, triggering the array programming
operation.
The confirm command (0xD0) is followed by the buffer data.
2.
3.
4.
Table 20.
Command Bus Cycles (Sheet 2 of 2)
Mode
Command
Bus
Cycles
First Bus Cycle
Second Bus Cycle
Oper
Addr
(1)
Data
(2)
Oper
Addr
(1)
Data
(2)
Table 21.
Command Codes and Definitions (Sheet 1 of 2)
Mode
Code
0xFF
Device Mode
Read Array
Description
Read
Places the device in Read Array mode. Array data is output on DQ[15:0].
Places the device in Read Status Register mode. The device enters this mode
after a program or erase command is issued. Status Register data is output on
DQ[7:0].
Places device in Read Device Identifier mode. Subsequent reads output
manufacturer/device codes, Configuration Register data, Block Lock status, or
Protection Register data on DQ[15:0].
Places the device in Read Query mode. Subsequent reads output Common
Flash Interface information on DQ[7:0].
Clear Status Registercommand is used to clear the SR error bits.
First cycle of a 2-cycle programming command; prepares the CUI for a write
operation. On the next write cycle, the address and data are latched and the
WSM executes the programming algorithm at the addressed location. During
program operations, the device responds only to Read Status Register and
Program Suspend commands. CE# or OE# must be toggled to update the
Status Register in asynchronous read. CE# or ADV# must be toggled to update
the Status Register Data for synchronous Non-array reads. The Read Array
command must be issued to read array data after programming has finished.
0x70
Read Status Register
0x90
Read Device ID
or Configuration
Register
0x98
Read Query
0x50
Write
0x40
Word Program Setup
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