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參數(shù)資料
| 型號(hào)： | PDP 955 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon AF Power Transistor(NPN硅放大器功率晶體管) |
| 中文描述： | NPN硅功率晶體管自動(dòng)對(duì)焦（npn型硅放大器功率晶體管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 94K |
| 代理商： | PDP 955 |
BDP 951 ... BDP 955
1
Sep-30-1999
NPN Silicon AF Power Transistor
For AF driver and output stages
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary types: BDP 952 ... BDP 956 (PNP)
VPS05163
1
2
3
4
Type
BDP 951
BDP 953
BDP 955
Marking
BDP 951
BDP 953
PDP 955
Pin Configuration
2 = C
2 = C
2 = C
Package
SOT-223
SOT-223
SOT-223
1 = B
1 = B
1 = B
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
Maximum Ratings
Parameter
BDP 951
Symbol
Unit
BDP 955
BDP 953
80
100
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Collector-emitter voltage
120
V
Collector-base voltage
100
120
140
Emitter-base voltage
5
5
5
3
5
A
DC collector current
Peak collector current
Base current
200
mA
500
Peak base current
Total power dissipation
,
T
S
= 99 °C
Junction temperature
W
3
150
°C
-65 ... 150
Storage temperature
Thermal Resistance
Junction ambient
1)
R
thJA
R
thJS
≤
42
≤
17
K/W
Junction - soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
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