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參數(shù)資料
| 型號： | PDM4M3120S12M |
| 廠商： | IXYS CORP |
| 元件分類： | SRAM |
| 英文描述： | 1M X 32 MULTI DEVICE SRAM MODULE, 12 ns, SMA72 |
| 封裝： | SIMM-72 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 108K |
| 代理商： | PDM4M3120S12M |
PDM4M3120
4
Rev 1.1
PRELIMINARY
DC Electrical Characteristics
(V
CC
= 3.3V
±
10%, T
A
= 0
°
C to 70
°
C)
NOTE
1. V
IL
= –1.5V for pulse widths less than 10 ns, once per cycle.
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
I
LI
Input Leakage Current
(Address)
V
CC
= Max.,V
IN
= V
SS
to V
CC
—
80
μ
A
I
LI
Input Leakage Current
(Data)
V
CC
= Max., V
IN
= V
SS
to V
CC
—
10
μ
A
I
LO
Output Leakage Current
V
CS
OUT
= V
= V
SS
to V
CC
, V
CC
= Max.,
IH
—
10
μ
A
V
OL
Output Low Voltage
I
OL
= 8 mA, V
CC
= Min.
—
0.4
V
V
OH
Output High Voltage
I
OL
= –4 mA, V
CC
= Min.
2.4
—
V
V
IH
Input High Voltage
2.2
6.0
V
V
IL
Input Low Voltage
–0.5
(1)
0.8
V
Power Supply Characteristics
NOTE
1. Preliminary specification only.
Symbol
Parameter
Max
(1)
Unit
I
CC
Operating Current
CS
= V
IL
, V
CC
= Max., f = f
MAX
, Outputs Open
900
mA
I
SB
Standby Current
CS
≥
V
IH
, V
CC
= Max., f = f
MAX
, Outputs Open
200
mA
I
SB1
Full Standby Current
f = 0, V
IN
> V
CS
≥
V
CC
– 0.2V,
CC
– 0.2V or < 0.2V, Outputs Open
85
mA
Capacitance
(1)
(T
A
= +25
°
C, f = 1.0 MHz)
NOTE
1. This parameter is determined by device characteristics but is not production tested.
Symbol
Parameter
Max.
Unit
C
I/O
Data I/O Capacitance, V
IN
= 0V
15
pF
C
IN(1)
Input Capacitance, (Address) V
IN
= 0V
60
pF
C
IN(2)
Input Capacitance, (
WE
,
OE
) V
IN
= 0V
75
pF
C
IN(3)
Input Capacitance, (
CS
), V
IN
= 0V
20
pF
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