參數(shù)資料
型號(hào)： PBSS4320T
英文描述： 20 V low VCEsat NPN transistor
中文描述： 20伏低飽和壓降NPN型晶體管
文件頁(yè)數(shù)： 3/12頁(yè)
文件大小： 72K
代理商： PBSS4320T
2003 Jan 30
3
Philips Semiconductors
Product specification
40 V low V
CEsat
NPN transistor
PBSS4240V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1.
2.
3.
4.
Device mounted on a ceramic circuit board, Al
2
O
3
, standard footprint.
Operated under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
30 ms.
Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1.
2.
3.
4.
Device mounted on a printed-circuit board, single-sided copper, tinplated, standard footprint.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
Device mounted on a ceramic circuit board, Al
2
O
3
, standard footprint.
Operated under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
30 ms.
Soldering
The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
repetitive peak collector current
peak collector current
base current (DC)
peak base current
total power dissipation
open emitter
open base
open collector
note 1
note 2
65
65
40
40
5
2
2
3
300
1
300
500
900
1.2
+150
150
+150
V
V
V
A
A
A
mA
A
mW
mW
mW
W
°
C
°
C
°
C
T
amb
≤
25
°
C; note 3
T
amb
≤
25
°
C; note 4
T
amb
≤
25
°
C; note 1
T
amb
≤
25
°
C; notes 2 and 3
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
note 1
note 2
note 3
notes 1 and 4
410
215
140
110
K/W
K/W
K/W
K/W
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PBSS4320T T/R 功能描述:兩極晶體管 - BJT NPN 20V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4320T,215 功能描述:兩極晶體管 - BJT NPN 20V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
PBSS4320T/DG,215 制造商:NXP Semiconductors 功能描述:Tape & Reel
PBSS4320T215 制造商:NXP Semiconductors 功能描述:BISS TRANSISTOR NPN 20V 2A 3-SOT-23
PBSS4320X 制造商:NXP Semiconductors 功能描述:TRANSISTOR NPN SOT-89 制造商:NXP Semiconductors 功能描述:TRANSISTOR, NPN, SOT-89 制造商:NXP Semiconductors 功能描述:NPN Transistor 3A SOT89,PBSS4320X
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