參數(shù)資料
型號: PA28F008SC-120
廠商: INTEL CORP
元件分類: PROM
英文描述: BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
中文描述: 1M X 8 FLASH 3.3V PROM, 120 ns, PDSO44
封裝: 13.30 X 28.20 MM, PLASTIC, SOP-44
文件頁數(shù): 20/33頁
文件大?。?/td> 466K
代理商: PA28F008SC-120
28F008SA
DC CHARACTERISTICS
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
I
CCW
V
CC
Byte Write Current
1
10
30
mA
Byte Write In Progress
I
CCE
V
CC
Block Erase Current
1
10
30
mA
Block Erase In Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA
Block Erase Suspended
CE
Y
e
V
IH
V
PP
s
V
CC
RP
Y
e
GND
g
0.2V
I
PPS
V
PP
Standby Current
1
g
1
g
15
m
A
I
PPD
V
PP
Deep PowerDown
Current
1
0.10
5.0
m
A
I
PPR
V
PP
Read Current
200
m
A
V
PP
l
V
CC
V
PP
e
V
PPH
Byte Write in Progress
I
PPW
V
PP
Byte Write Current
1
10
30
mA
I
PPE
V
PP
Block Erase Current
1
10
30
mA
V
PP
e
V
PPH
Block Erase in Progress
I
PPES
V
PP
Erase Suspend
Current
1
90
200
m
A
V
PP
e
V
PPH
Block Erase Suspended
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
3
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e b
2.5 mA
I
OH
e b
2.5
m
A
V
CC
e
V
CC
Min
I
OH
e b
100
m
A
V
CC
e
V
CC
Min
V
OH1
Output High Voltage (TTL)
3
2.4
V
V
OH2
Output High Voltage
(CMOS)
0.85 V
CC
V
V
CC
b
0.4
V
PPL
V
PP
during Normal
Operations
4
0.0
6.5
V
V
PPH
V
PP
during Erase/Write
Operations
11.4
12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock
Voltage
2.0
V
20
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