參數(shù)資料
型號: PA28F008SA-85
廠商: INTEL CORP
元件分類: PROM
英文描述: 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY
中文描述: 1M X 8 FLASH 12V PROM, 85 ns, PDSO44
封裝: 0.525 X 1.110 INCH, PLASTIC, SOP-44
文件頁數(shù): 21/33頁
文件大?。?/td> 466K
代理商: PA28F008SA-85
28F008SA
EXTENDED TEMPERATURE OPERATING CONDITIONS
Symbol
Parameter
Notes
Min
Max
Unit
§
C
T
A
Operating Temperature
b
40
a
85
V
CC
V
CC
Supply Voltage (10%)
5
4.50
5.50
V
V
CC
V
CC
Supply Voltage (5%)
5
4.75
5.25
V
DC CHARACTERISTICS: EXTENDED TEMPERATURE OPERATION
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Condition
I
LI
Input Load Current
1
g
1.0
m
A
V
CC
e
V
CC
Max
V
IN
e
V
CC
or GND
V
CC
e
V
CC
Max
V
OUT
e
V
CC
or GND
V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
IH
V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
CC
g
0.2V
RP
Y
e
GND
g
0.2V
I
OUT
(RY/BY
Y
)
e
0 mA
V
CC
e
V
CC
Max, CE
Y
e
GND
f
e
8 MHz, I
OUT
e
0 mA
CMOS Inputs
I
LO
Output Leakage Current
1
g
10
m
A
I
CCS
V
CC
Standby Current
1, 3
1.0
2.0
mA
30
100
m
A
I
CCD
V
CC
Deep PowerDown
Current
1
0.20
20
m
A
I
CCR
V
CC
Read Current
1
20
35
mA
25
50
mA
V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
8 MHz, I
OUT
e
0 mA
TTL Inputs
I
CCW
V
CC
Byte Write Current
1
10
30
mA
Byte Write In Progress
I
CCE
V
CC
Block Erase Current
1
10
30
mA
Block Erase In Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA
Block Erase Suspended
CE
Y
e
V
IH
V
PP
s
V
CC
RP
Y
e
GND
g
0.2V
I
PPS
V
PP
Standby Current
1
g
1
g
15
m
A
I
PPD
V
PP
Deep PowerDown
Current
1
0.10
5.0
m
A
I
PPR
V
PP
Read Current
200
m
A
V
PP
l
V
CC
V
PP
e
V
PPH
Byte Write in Progress
I
PPW
V
PP
Byte Write Current
1
10
30
mA
I
PPE
V
PP
Block Erase Current
1
10
30
mA
V
PP
e
V
PPH
Block Erase in Progress
I
PPES
V
PP
Erase Suspend
Current
1
90
200
m
A
V
PP
e
V
PPH
Block Erase Suspended
21
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