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參數(shù)資料
| 型號： | P3Z22V10IBDH |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PLD |
| 英文描述： | 3V zero power, TotalCMOS, universal PLD device |
| 中文描述： | EE PLD, 15 ns, PDSO24 |
| 封裝： | 4.40 MM, PLASTIC, SOT-355-1, TSSOP-24 |
| 文件頁數(shù)： | 8/16頁 |
| 文件大小： | 191K |
| 代理商： | P3Z22V10IBDH |
Philips Semiconductors
Product specification
P3Z22V10
3V zero power, TotalCMOS
, universal PLD device
1997 Jul 18
8
ABSOLUTE MAXIMUM RATINGS
1
SYMBOL
PARAMETER
LIMITS
UNIT
MIN.
MAX.
V
DD
Supply voltage
–0.5
4.6
V
V
I
Input voltage
–0.5
5.5
2
V
V
OUT
Output voltage
–0.5
5.5
2
V
I
IN
Input current
–30
30
mA
I
OUT
Output current
–100
100
mA
T
R
Allowable thermal rise ambient to junction
0
75
°
C
T
J
Junction temperature range
–40
150
°
C
T
STG
NOTES:
1. Stresses above those listed may cause malfunction or permanent damage to the device. This is a stress rating only. Functional operation at
these or any other condition above those indicated in the operational and programming specification of the device is not implied.
2. Except F7, where max = V
DD
+ 0.5V.
Storage temperature range
–65
150
°
C
OPERATING RANGE
PRODUCT GRADE
TEMPERATURE
VOLTAGE
Commercial
0 to +70
°
C
3.3
±
10% V
Industrial
–40 to +85
°
C
3.3
±
10% V
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