參數(shù)資料
型號: P3Z22V10IBDH
廠商: NXP SEMICONDUCTORS
元件分類: PLD
英文描述: 3V zero power, TotalCMOS, universal PLD device
中文描述: EE PLD, 15 ns, PDSO24
封裝: 4.40 MM, PLASTIC, SOT-355-1, TSSOP-24
文件頁數(shù): 11/16頁
文件大?。?/td> 191K
代理商: P3Z22V10IBDH
Philips Semiconductors
Product specification
P3Z22V10
3V zero power, TotalCMOS
, universal PLD device
1997 Jul 18
11
TEST LOAD CIRCUIT
+3.3V
C
L
R
1
R
2
S
1
C
2
C
1
NOTE:
C
1
and C
2
are to bypass V
to GND.
R
1
= 300
, R
2
= 300
, C
L
= 35pF.
V
CC
GND
CK
I
n
I
0
F
0
F
n
DUT
OE
INPUTS
SP00478
THEVENIN EQUIVALENT
35pF
150
DUT OUTPUT
V
L
= 1.65V
SP00479A
VOLTAGE WAVEFORM
90%
10%
1.5ns
1.5ns
+3.0V
0V
t
R
t
F
MEASUREMENTS:
All circuit delays are measured at the +1.5V level of
inputs and outputs, unless otherwise specified.
Input Pulses
SP00368
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