參數(shù)資料
型號(hào): P28F002BC-T120
廠商: INTEL CORP
元件分類: PROM
英文描述: 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
中文描述: 256K X 8 FLASH 12V PROM, 120 ns, PDIP40
封裝: PLASTIC, DIP-40
文件頁(yè)數(shù): 24/37頁(yè)
文件大?。?/td> 455K
代理商: P28F002BC-T120
28F002BC 2-MBIT BOOT BLOCK FLASH MEMORY
E
24
PRELIMINARY
3.7
Power Supply Decoupling
Flash memory’s power switching characteristics
require careful device decoupling methods. System
designers should consider three supply current
issues:
1.
Standby current levels (I
CCS
)
2.
Active current levels (I
CCR
)
3.
Transient peaks produced by falling and rising
edges of CE#
Transient current magnitudes depend on the device
outputs’ capacitive and inductive loading. Two-line
control and proper decoupling capacitor selection
will suppress these transient voltage peaks. Each
flash device should have a 0.1 μF ceramic
capacitor connected between each V
CC
and GND,
and between its V
PP
and GND. These high-
frequency, inherently low-inductance capacitors
should be placed as close as possible to the
package leads.
3.7.1
V
TRACE ON PRINTED CIRCUIT
BOARDS
Designing for in-system writes to the flash memory
requires special consideration of the V
PP
power
supply trace by the printed circuit board designer.
The V
PP
pin supplies the flash memory cells current
for programming and erasing. One should use
similar trace widths and layout considerations given
to the V
CC
power supply trace. Adequate V
PP
supply traces and decoupling capacitors placed
adjacent to the component will decrease spikes and
overshoots.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
P28F002BC-T80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY
P28F010120 制造商:Rochester Electronics LLC 功能描述:- Bulk
P28F010-120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY
P28F010150 制造商:INTEL 功能描述:*
P28F010-150 制造商:Intel 功能描述: