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參數(shù)資料
| 型號(hào)： | P28F001BX-B70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 |
| 封裝： | 0.620 X 1.640 INCH, PLASTIC, DIP-32 |
| 文件頁(yè)數(shù)： | 9/33頁(yè) |
| 文件大小： | 436K |
| 代理商： | P28F001BX-B70 |
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28F001BX-T/28F001BX-B
Table 3. 28F001BX Command Definitions
Command
Cycles
Req’d
Bus
Notes
First Bus Cycle
Second Bus Cycle
Operation Address Data Operation Address Data
Read Array/Reset
1
1
Write
X
FFH
Intelligent Identifier
3
2, 3, 4
Write
X
90H
Read
IA
IID
Read Status Register
2
3
Write
X
70H
Read
X
SRD
Clear Status Register
1
Write
X
50H
Erase Setup/Erase Confirm
2
2
Write
BA
20H
Write
BA
D0H
Erase Suspend/Erase Resume
2
Write
X
B0H
Write
X
D0H
Program Setup/Program
2
2, 3
Write
PA
40H
Write
PA
PD
NOTES:
1. Bus operations are defined in Table 2.
2. IA
e
Identifier Address: 00H for manufacturer code, 01H for device code.
BA
e
Address within the block being erased.
PA
e
Address of memory location to be programmed.
3. SRD
e
Data read from Status Register. See Table 4 for a description of the Status Register bits.
PD
e
Data to be programmed at location PA. Data is latched on the rising edge of WE
Y
.
IID
e
Data read from Intelligent Identifiers.
4. Following the Intelligent Identifier command, two read operations access manufacture and device codes.
5. Commands other than those shown above are reserved by Intel for future device implementations and should not be
used.
Read Status Register Command
The 28F001BX contains a Status Register which
may be read to determine when a program or erase
operation is complete, and whether that operation
completed successfully. The Status Register may be
read at any time by writing the Read Status Register
command (70H) to the Command Register. After
writing this command, all subsequent read opera-
tions output data from the Status Register, until an-
other valid command is written to the Command
Register. The contents of the Status Register are
latched on the falling edge of OE
Y
or CE
Y
, which-
ever occurs last in the read cycle. OE
Y
or CE
Y
must be toggled to V
IH
before further reads to up-
date the Status Register latch. The Read Status
Register command functions when V
PP
e
V
PPL
or
V
PPH
.
Clear Status Register Command
The Erase Status and Program Status bits are set to
‘‘1’’ by the Write State Machine and can only be
reset by the Clear Status Register command. These
bits indicate various failure conditions (see Table 4).
By allowing system software to control the resetting
of these bits, several operations may be performed
(such as cumulatively programming several bytes or
erasing multiple blocks in sequence). The Status
Register may then be polled to determine if an error
occurred during that series. This adds flexibility to
the way the device may be used.
Additionally, the V
PP
Status bit (SR.3), when set to
‘‘1’’, MUST be reset by system software before fur-
ther byte programs or block erases are attempted.
To clear the Status Register, the Clear Status Regis-
ter command (50H) is written to the Command Reg-
ister. The Clear Status Register command is func-
tional when V
PP
e
V
PPL
or V
PPH
.
9
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PDF描述 |
|---|---|
| P28F001BX-B90 | DB9 MALE TO DB9 FEMALE AME |
| P28F002BC-T120 | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| P28F002BC-T80 | 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| P28F512-150 | 512K(64Kx8)CMOS FLASH MEMORY |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| P28F001BX-B90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-T150 | 制造商:Intel 功能描述:NOR Flash, 128K x 8, 32 Pin, Plastic, DIP |
| P28F001BX-T70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
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