參數(shù)資料
型號(hào): P28F001BX-B70
廠商: INTEL CORP
元件分類: PROM
英文描述: 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 70 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁(yè)數(shù): 17/33頁(yè)
文件大?。?/td> 436K
代理商: P28F001BX-B70
28F001BX-T/28F001BX-B
DC CHARACTERISTICS
(Continued)
V
CC
e
5.0V
g
10%, T
A
e
0
§
C to
a
70
§
C
Symbol
Parameter
Notes Min Typ
Max
Unit
Test Conditions
I
CCR
V
CC
Read Current
1
13
30
mA V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
8 MHz, I
OUT
e
0 mA
I
CCP
V
CC
Programming Current
1
5
20
mA Programming in Progress
I
CCE
V
CC
Erase Current
1
6
20
mA Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
5
10
mA Erase Suspended
CE
Y
e
V
IH
m
A V
PP
s
V
CC
m
A V
PP
l
V
CC
m
A RP
Y
e
GND
g
0.2V
mA V
PP
e
V
PPH
Programming in Progress
I
PPS
V
PP
Standby Current
1
g
1
g
10
90
200
I
PPD
V
PP
Deep Power-Down Current
1
0.80
1.0
I
PPP
V
PP
Programming Current
1
6
30
I
PPE
V
PP
Erase Current
1
6
30
mA V
PP
e
V
PPH
Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
90
300
m
A V
PP
e
V
PPH
Erase Suspended
I
ID
A
9
Intelligent Identifier Current
1
90
500
m
A A
9
e
V
ID
V
IL
Input Low Voltage
b
0.5
0.8
V
V
IH
Input High Voltage
2.0
V
CC
a
0.5
V
V
OL
Output Low Voltage
0.45
V
V
CC
e
V
CC
Min
I
OL
e
5.8 mA
V
CC
e
V
CC
Min
I
OH
e
2.5 mA
V
OH
Output High Voltage
2.4
V
V
ID
A
9
Intelligent Identifier Voltage
11.5
13.0
V
V
PPL
V
PP
during Normal Operations
3
0.0
6.5
V
V
PPH
V
PP
during Prog/Erase Operations
11.4 12.0
12.6
V
V
LKO
V
CC
Erase/Write Lock Voltage
RP
Y
, OE
Y
Unlock Voltage
2.5
V
V
HH
11.4
12.6
V
Boot Block Prog/Erase
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
e
5.0V, V
PP
e
12.0V, T
A
e
25
§
C. These currents
are valid for all product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the 28F001BX is read while in Erase Suspend mode, current draw is the
sum of I
CCES
and I
CCR
.
3. Erase/Programs are inhibited when V
PP
e
V
PPL
and not guaranteed in the range between V
PPH
and V
PPL
.
17
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