參數(shù)資料
型號： OM45L120PB
英文描述： High Current, High Voltage 1200V, 70 Amp Dual IGBTs With FRED Diodes(大電流，高電壓，1200V , 70A，雙絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）)
中文描述： 大電流，高電壓1200伏，70安培與弗雷德二極管（大電流，高電壓，1200伏，70A條，雙絕緣柵雙極型晶體管（帶快速恢復外延二極管（弗雷德），半橋結構）雙的IGBT）
文件頁數(shù)： 3/4頁
文件大小： 39K
代理商： OM45L120PB
3.1 - 61
3.1
OM60L60PB OM45L120PB OM50F60PB OM35F120PB
ELECTRICAL CHARACTERISTICS: OM50F60PB
(T
C
= 25°C unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 μA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
(BR)CES
I
CES
600
-
-
V
-
-
0.25
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
-
-
1.0
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 250 μA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 50 A
V
GE(th)
V
CE(sat)
2.5
-
5.0
V
-
-
2.7
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 50 A
g
fs
C
iss
C
oss
C
rss
25
-
-
S
Input Capacitance
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
-
4000
-
pF
Output Capacitance
-
340
-
pF
Reverse Transfer Capacitance
-
100
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
-
50
-
nS
Rise Time
V
CC
= 480 V, I
C
= 50 A,
-
200
-
nS
Turn-Off Delay Time
R
GS
= 2.7 , V
GS
= 15 V, L = 100 μH
-
200
-
nS
Fall Time
-
300
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 480 V, I
C
= 50 A
V
GE
= 15 V, R
g
= 2.7
L = 100 μH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
300
-
nS
Fall Time
-
600
-
nS
Turn-Off Losses
-
9.6
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
j
= 25°C
I
F
= 60 A, T
j
= 150°C
V
R
= 600 V, T
j
= 25°C
V
R
= 480 V, T
j
= 125°C
I
F
= 1 A, di/dt = 200 A μ/S
V
R
= 30 V, T
j
= 25°C
V
f
-
-
1.85
V
-
-
1.50
Maximum Reverse Current
I
r
-
-
200
μA
-
-
14
mA
Reverse Recovery Time
t
rr
-
-
50
nS
ELECTRICAL CHARACTERISTICS: OM35L120PB
(T
C
= 25°C unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 3 mA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
(BR)CES
I
CES
1200
-
-
V
-
-
3.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
-
-
1.2
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 4 mA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 35 A
V
GE(th)
V
CE(sat)
4.0
-
8.0
V
-
-
4.0
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 35 A
g
fs
C
iss
C
oss
C
rss
26
-
-
S
Input Capacitance
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
-
3800
-
pF
Output Capacitance
-
235
-
pF
Reverse Transfer Capacitance
-
60
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
-
80
-
nS
Rise Time
V
CC
= 960 V, I
C
= 35 A,
R
GS
= 2.7 , V
GS
= 15 V,
-
150
-
nS
Turn-Off Delay Time
-
400
-
nS
Fall Time
L = 100 μH
-
700
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 960 V, I
C
= 35 A
V
GE
= 15 V, R
g
= 2.7
L = 100 μH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
400
-
nS
Fall Time
-
1100
-
nS
Turn-Off Losses
-
54
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, T
j
= 25°C
I
F
= 52 A, T
j
= 150°C
V
R
= 1200 V, T
j
= 25°C
V
R
= 960 V, T
j
= 125°C
I
F
= 1 A, di/dt = 200 A μ/S
V
R
= 30 V, T
j
= 25°C
V
f
-
-
2.55
V
-
-
2.15
Maximum Reverse Current
I
r
-
-
2.2
mA
-
-
14
mA
Reverse Recovery Time
t
rr
-
-
60
nS
相關PDF資料
PDF描述
OM50F60SB High Current, High Voltage 600V , 75 Amp IGBT With FRED Diodes(大電流，高電壓，600V , 75A，絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）)
OM60L60SB High Current, High Voltage 600V , 75 Amp IGBT With FRED Diodes(大電流，高電壓，600V , 75A，絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）)
OM35F120SB High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）)
OM45L120SB High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）)
OM50N06SA 60V Ultra Low R DS(on) Power MOSFET(極低漏源極導通電阻，60V功率MOS場效應管)
相關代理商/技術參數(shù)
參數(shù)描述
OM4705 制造商:Ohmite Mfg Co 功能描述: 制造商:Ohmite Mfg Co 功能描述:Res Carbon Film 47 Ohm 5% 1W -450ppm/°C Conformal AXL Thru-Hole
OM4705E 制造商:Ohmite Mfg Co 功能描述:Resistor;Carbon Film;Res 47 Ohms;Pwr-Rtg 1 W;Tol 5%;Axial;Cer-Core
OM4715 制造商:Ohmite Mfg Co 功能描述:
OM4715E 制造商:Ohmite Mfg Co 功能描述:Resistor;Carbon Film;Res 470 Ohms;Pwr-Rtg 1 W;Tol 5%;Axial;Cer-Core
OM4725E 制造商:Ohmite Mfg Co 功能描述:Resistor;Carbon Film;Res 4.7 Kilohms;Pwr-Rtg 1 W;Tol 5%;Axial;Cer-Core
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*