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參數(shù)資料
| 型號： | OM35F120SB |
| 英文描述： | High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）) |
| 中文描述： | 大電流，高電壓1200伏，70安培IGBT的與弗雷德二極管（大電流，高電壓，1200伏，70A條，絕緣柵雙極型晶體管（帶快速恢復外延二極管（弗雷德），半橋結構）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | OM35F120SB |
3.1 - 63
3.1
4 11 R0
High Current, High Voltage 600V And 1200V,
Up To 75 Amp IGBTs With FRED Diodes
FEATURES
Includes Internal FRED Diode
Rugged Package Design
Solder Terminals
Very Low Saturation Voltage
Fast Switching, Low Drive Current
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
@ 25°C
Part
V
CE
Number
(V)
SCHEMATIC
MECHANICAL OUTLINE
OM45L120SB
OM35F120SB
OM60L60SB
OM50F60SB
C
E
G
.563
.125
TERMINAL 1
.472
2.000
.813
.125 DIA.
.166 DIA.
.250
1.500
.324
.375
.275
.375
.875
1.375
1.750
.510
.030
.515
.050
C
E
G
IGBTS IN HERMETIC ISOLATED POWER
BLOCK PACKAGES
Preliminary Data Sheet
I
C
(A)
V
CE(sat)
Type
OM60L60SB
OM45L120SB
OM50F60SB
OM35F120SB
600
1200
600
1200
75
70
75
70
1.8 Volts
3 Volts
2.7 Volts
4 Volts
Lo Sat.
Lo Sat.
Hi Speed
Hi Speed
相關PDF資料 |
PDF描述 |
|---|---|
| OM45L120SB | High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復外延二極管(FRED)，半橋結構）) |
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| OM50N05SA | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導通電阻，50V功率MOS場效應管) |
| OM50N05ST | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導通電阻，50V功率MOS場效應管) |
| OM60N05SA | 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導通電阻，50V功率MOS場效應管) |
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