參數(shù)資料
型號(hào)： OM35F120SB
英文描述： High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
中文描述： 大電流，高電壓1200伏，70安培IGBT的與弗雷德二極管（大電流，高電壓，1200伏，70A條，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管（弗雷德），半橋結(jié)構(gòu)））
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 18K
代理商： OM35F120SB
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
OM60L60SB OM45L120SB OM50F60SB OM35F120SB
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameters
60L60SB
45L120SB
50F60SB
35F120SB
Units
V
CES
Drain Source Voltage
600
1200
600
1200
V
V
CGR
Drain Gate Voltage (R
GS
= 1.0 M)
600
1200
600
1200
V
I
C
@ T
C
= 25°C
Continuous Drain Current
75
70
75
70
A
I
C
@ T
C
= 90°C
Continuous Drain Current
60
45
50
35
A
I
C
Pulsed
Pulsed Drain Current
1
200
180
200
140
A
P
D
@ T
C
= 25°C
Max. Power Dissipation
250
250
250
250
W
P
D
@ T
C
= 100°C
Max. Power Dissipation
100
100
100
100
W
Junction-To-Case
Linear Derating Factor
2
2
2
2
W/°C
Junction-To-Ambient Linear Derating Factor
.033
.033
.033
.033
W/°C
T
j
, T
stg
Operating And Storage Temperature Range
-55 to +150
-55 to +150
-55 to +150
-55 to +150
°C
Lead Temperature (1/16" from case for 10 sec.)
230
230
230
230
°C
R
thJC
Thermal Resistance (Junction-To-Case)
0.5
0.5
0.5
0.5
°C/W
R
thJA
Thermal Resistance (Junction-To-Ambient)
30
30
30
30
°C/W
Note: 1. Pulse Test:
Pulse Width 300 μsec, Duty Cycle 2%.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Test Condition
Symbol
Part No.
Min.
Max.
Units
Gate Threshold Voltage
V
CE
= V
GE
, I
D
= 250μA
V
GE(th)
All
2.5
5.0
V
Gate-Emitter Leakage Current
V
GE
= ±20 V
DC
I
GES
All
±100
nA
Off State
V
CE
= V
DSS
x 0.8 T
C
= 25°C
I
CES
All
200
μA
Collector-Emitter Leakage
V
GS
= 0V T
C
= 125°C
I
CES
All
1
mA
60L60SB
600
Collector-Emitter
V
GE
= 0V, I
C
= 250 μA
V
CES
45L120SB
1200
Breakdown Voltage
50F60SB
600
35F120SB
1200
V
60L60SB
1.8
45L120SB
3.0
Static Collector-Emitter Voltage
V
GE
= 15V, I
C
= I
C(100)
x 0.5
V
CE(sat)
50F60SB
2.7
35F120SB
4.0
The above data is preliminary.
Please contact factory for additional data and the dynamic and switching characteristics.
相關(guān)PDF資料
PDF描述
OM45L120SB High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
OM50N06SA 60V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，60V功率MOS場(chǎng)效應(yīng)管)
OM50N05SA 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管)
OM50N05ST 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管)
OM60N05SA 50V Ultra Low R DS(on) Power MOSFET(極低漏源極導(dǎo)通電阻，50V功率MOS場(chǎng)效應(yīng)管)
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