參數(shù)資料
型號(hào)： OM45L120PB
英文描述： High Current, High Voltage 1200V, 70 Amp Dual IGBTs With FRED Diodes(大電流，高電壓，1200V , 70A，雙絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
中文描述： 大電流，高電壓1200伏，70安培與弗雷德二極管（大電流，高電壓，1200伏，70A條，雙絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管（弗雷德），半橋結(jié)構(gòu)）雙的IGBT）
文件頁數(shù)： 2/4頁
文件大?。?/td> 39K
代理商： OM45L120PB
3.1 - 60
3.1
OM60L60PB OM45L120PB OM50F60PB OM35F120PB
ELECTRICAL CHARACTERISTICS: OM60L60PB
(T
C
= 25°C unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 μA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
(BR)CES
I
CES
600
-
-
V
-
-
0.25
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
C
= 125°C
-
-
1.0
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 250 μA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 60 A
V
GE(th)
V
CE(sat)
2.5
-
5.0
V
-
-
1.8
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 60 A
g
fs
C
iss
C
oss
C
rss
30
-
-
S
Input Capacitance
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
-
4000
-
pF
Output Capacitance
-
340
-
pF
Reverse Transfer Capacitance
-
100
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
-
50
-
nS
Rise Time
V
CC
= 480 V, I
C
= 60 A,
R
GS
= 2.7 , V
GS
= 15 V,
-
200
-
nS
Turn-Off Delay Time
-
600
-
nS
Fall Time
L = 100 μH
-
500
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 480 V, I
C
= 60 A
V
GE
= 15 V, R
g
= 2.7
L = 100 μH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
1000
-
nS
Fall Time
-
1000
-
nS
Turn-Off Losses
-
26
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
j
= 25°C
I
F
= 60 A, T
j
= 150°C
V
R
= 600 V, T
j
= 25°C
V
R
= 480 V, T
j
= 125°C
I
F
= 1 A, di/dt = 200 A μ/S
V
R
= 30 V, T
j
= 25°C
V
f
-
-
1.85
V
-
-
1.50
Maximum Reverse Current
I
r
-
-
200
μA
-
-
14
mA
Reverse Recovery Time
t
rr
-
-
50
nS
ELECTRICAL CHARACTERISTICS: OM45L120PB
(T
C
= 25°C unless otherwise specified)
Symbol
Characteristic
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 3 mA, V
CE
= 0 V
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
(BR)CES
I
CES
1200
-
-
V
-
-
3.0
mA
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
-
-
1.2
mA
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
-
-
±100
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 4 mA
Collector Emitter Saturation Voltage, V
GE
= 15 V, I
C
= 45 A
V
GE(th)
V
CE(sat)
4.0
-
8.0
V
-
-
3.0
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
V
CE
= 10 V, I
C
= 45 A
g
fs
C
iss
C
oss
C
rss
26
-
-
S
Input Capacitance
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
-
4200
-
pF
Output Capacitance
-
290
-
pF
Reverse Transfer Capacitance
-
65
-
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
t
d(on)
t
r
t
d(off)
t
f
-
80
-
nS
Rise Time
V
CC
= 960 V, I
C
= 45 A,
R
GS
= 2.7 , V
GS
= 15 V,
-
250
-
nS
Turn-Off Delay Time
-
450
-
nS
Fall Time
L = 100 μH
-
1200
-
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
V
CE(clamp)
= 960 V, I
C
= 45 A
V
GE
= 15 V, R
g
= 2.7
L = 100 μH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
450
-
nS
Fall Time
-
1200
-
nS
Turn-Off Losses
-
27
-
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, T
j
= 25°C
I
F
= 52 A, T
j
= 150°C
V
R
= 1200 V, T
j
= 25°C
V
R
= 960 V, T
j
= 125°C
I
F
= 1 A, di/dt = 200 A μ/S
V
R
= 30 V, T
j
= 25°C
V
f
-
-
2.55
V
-
-
2.15
Maximum Reverse Current
I
r
-
-
2.2
mA
-
-
14
mA
Reverse Recovery Time
t
rr
-
-
60
nS
相關(guān)PDF資料
PDF描述
OM50F60SB High Current, High Voltage 600V , 75 Amp IGBT With FRED Diodes(大電流，高電壓，600V , 75A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
OM60L60SB High Current, High Voltage 600V , 75 Amp IGBT With FRED Diodes(大電流，高電壓，600V , 75A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
OM35F120SB High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
OM45L120SB High Current, High Voltage 1200V, 70 Amp IGBT With FRED Diodes(大電流，高電壓，1200V , 70A，絕緣柵雙極型晶體管（帶快速恢復(fù)外延二極管(FRED)，半橋結(jié)構(gòu)）)
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