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參數(shù)資料
| 型號： | OM11N60SA |
| 英文描述： | 600V, 11 Amp, N-Channel MOSFET(600V, 11 A，N溝道MOS場效應(yīng)管) |
| 中文描述： | 600V的，11安培，N通道MOSFET（600V的，11日，馬鞍山?溝道場效應(yīng)管） |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | OM11N60SA |
3.1 - 21
OM11N60SA - OM11N55SA
3.1
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Symbol
Parameter
OM11N60
OM11N55
Units
V
DGR
Drain Source Voltage
600
550
V
V
DS
Drain Gate Voltage (R
GS
= 1.0 M )
600
550
V
I
D
Continuous Drain Current @ T
C
= 25°C
11
11
A
I
D
Continuous Drain Current @ T
C
= 100°C
7.2
7.2
A
I
DM
Pulsed Drain Current
1
52
52
A
P
D
Max. Power Dissipation @ T
C
= 25°C
125
125
W
P
D
Max. Power Dissipation @ T
C
= 100°C
50
50
W
Linear Derating Factor Jct. to Case
1.0
1.0
W/°C
Linear Derating Factor Jct. to Ambient
.020
.020
W/°C
T
J
, T
stg
Operating and Storage Temp. Range
-55 to 150
°C
Lead Temperature
(1/16" from case for 10 sec.)
300
300
°C
1 Pulse Test:
Pulse width 300 μsec. Duty Cycle 2%.
THERMAL RESISTANCE
(Maximum at T
A
= 25°C)
R
thJC
Junction-to-Case
1.0
1.0
°C/W
R
thJA
Junction-to-Ambient (Free Air Operation)
50
50
°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM11N60SAZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-259AA |
| OM11N60SW | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V Single N-Channel Hi-Rel MOSFET in a D3 package |
| OM12000/10000,551 | 制造商:NXP Semiconductors 功能描述:PHAOM12000/10000,55 ATOP2.5G |
| OM12000/1000000,55 | 制造商:NXP Semiconductors 功能描述:MOD ATOP AUTO TELEMATIC SOP022 |
| OM12000/1000000,551 | 制造商:NXP Semiconductors 功能描述:- Bulk |
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