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參數(shù)資料
| 型號： | OM11N60SA |
| 英文描述： | 600V, 11 Amp, N-Channel MOSFET(600V, 11 A，N溝道MOS場效應(yīng)管) |
| 中文描述： | 600V的，11安培，N通道MOSFET（600V的，11日，馬鞍山?溝道場效應(yīng)管） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 29K |
| 代理商： | OM11N60SA |
3.1 - 19
3.1
600V & 550V, 11 Amp, N-Channel
MOSFET In Hermetic Metal Package
4 11 R1
Supersedes 2 04 R0
POWER MOSFET IN HERMETIC ISOLATED
TO-254AA PACKAGE
FEATURES
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S
Ceramic Feedthroughs Also Available
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. The device breakdown ratings provide a substantial
voltage margin for stringent applications such as 270 VDC aircraft power and/or
rectified 230 VAC power (line operation). They are ideally suited for Military
requirements where small size, high performance and high reliability are required,
and in applications such as switching power supplies, motor controls, inverters,
choppers, audio amplifiers and high energy pulse circuits.
MAXIMUM RATINGS
OM11N60SA
OM11N55SA
PART NUMBER
OM11N60
OM11N55
V
DS
600V
550V
R
DS(on)
.50
.44
I
D(MAX)
11A
11A
DRAIN
GATE
SOURCE
SCHEMATIC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| OM11N60SAZ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-259AA |
| OM11N60SW | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:600V Single N-Channel Hi-Rel MOSFET in a D3 package |
| OM12000/10000,551 | 制造商:NXP Semiconductors 功能描述:PHAOM12000/10000,55 ATOP2.5G |
| OM12000/1000000,55 | 制造商:NXP Semiconductors 功能描述:MOD ATOP AUTO TELEMATIC SOP022 |
| OM12000/1000000,551 | 制造商:NXP Semiconductors 功能描述:- Bulk |
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