參數(shù)資料
型號： OM11N60SA
英文描述： 600V, 11 Amp, N-Channel MOSFET(600V, 11 A，N溝道MOS場效應(yīng)管)
中文描述： 600V的，11安培，N通道MOSFET（600V的，11日，馬鞍山?溝道場效應(yīng)管）
文件頁數(shù)： 2/4頁
文件大小： 29K
代理商： OM11N60SA
3
O
3
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM11N60SA
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
600
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSS
Gate-Body Leakage
I
DSS
Zero Gate Voltage Drain
Current
ELECTRICAL CHARACTERISTICS:
T
C
= 25° unless otherwise noted
STATIC P/N OM11N55SA
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
550
Voltage
V
GS(th)
Gate-Threshold Voltage
2.0
I
GSSF
Gate-Body Leakage Forward
I
DSS
Zero Gate Voltage Drain
Current
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS
, I
D
= 250
m
A
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.5 A
V
V
GS
= 0,
I
D
= 250
m
A
V
DS
= V
GS,
I
D
= 250
m
A
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
> I
D(on)
x R
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.5 A
4.0
± 100
0.25
1.0
V
nA
mA
mA
4.0
±100
0.25
1.0
V
nA
mA
mA
0.1
0.2
0.1
0.2
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
11.0
A
V
I
D(on)
V
DS(on)
On-State Drain Current
1
Static Drain-Source On-State
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
11.0
A
V
3.1
3.3
R
DS(on)
.47
.50
V
GS
= 10 V, I
D
= 5.5 A
R
DS(on)
.37
.44
V
GS
= 10 V, I
D
= 5.5 A
R
DS(on)
1.0
V
GS
= 10 V, I
D
= 5.5 A,
T
C
= 125 C
R
DS(on)
.88
V
GS
= 10 V, I
D
= 5.5 A,
T
C
= 125 C
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
DYNAMIC
g
fs
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 5.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5
W
, R
L
= 30
W
(MOSFET) switching times are
essentially independent of
operating temperature.
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5.0
S
(
W
)
pF
pF
pF
ns
ns
ns
ns
V
DS
2 V
DS(on)
, I
D
= 5.5 A
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5
W
, R
L
= 30
W
(MOSFET) switching times are
essentially independent of
operating temperature.
3000
440
220
55
75
225
135
3000
440
220
55
75
225
135
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
(Body Diode)
I
SM
Source Current
1
(Body Diode)
V
SD
Diode Forward Voltage
1
t
rr
Reverse Recovery Time
- 11
A
Modified MOSPOWER
- 11
A
Modified MOSPOWER
symbol showing
symbol showing
- 52
A
the integral P-N
- 52
A
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -11 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
Junction rectifier.
T
C
= 25 C, I
S
= -11 A, V
GS
= 0
T
J
= 150 C,I
F
= I
S
,
dl
F
/ds = 100 A/
m
s
- 1.4
V
ns
- 1.4
V
ns
700
700
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300
m
sec, Duty Cycle
2%.
G
D
S
G
D
S
(
W
)
(
W
)
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