參數(shù)資料
型號： NZT753
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： PNP Current Driver Transistor
中文描述： 4 A, 100 V, PNP, Si, POWER TRANSISTOR
封裝： SOT-223, 4 PIN
文件頁數(shù)： 1/3頁
文件大?。?/td> 39K
代理商： NZT753
2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
N
Absolute Maximum Ratings*
T
A
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current
T
J
, T
STG
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150
°
C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
A
=25
°
C unless otherwise noted
*Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Thermal Characteristics *
T
A
=25
°
C
unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25C
R
θ
JA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 36mm
×
18mm
×
1.5mm; mounting pad for the collector lead min 6cm
2
.
Parameter
Value
- 100
- 120
- 5.0
- 4.0
- 55 ~ +150
Units
V
V
V
A
°
C
- Continuous
Symbol
Off Characteristics
BV
CEO
BV
CBO
BV
EBO
I
CBO
Parameter
Test Conditions
Min.
Max.
Units
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
I
C
= -10mA, I
B
= 0
I
C
= -100
μ
A, I
E
= 0
I
E
= -100
μ
A, I
C
= 0
V
CB
= -100V, I
E
= 0
T
A
= 100
°
C
V
EB
= -4V, I
C
= 0
-100
-120
-5.0
V
V
V
μ
A
μ
A
μ
A
-0.1
-10
-0.1
I
EBO
On Characteristics *
h
FE
Emitter-Base Cutoff Current
DC Current Gain
V
CE
= -2.0V, I
C
= -50mA
V
CE
= -2.0V, I
C
= -500mA
V
CE
= -2.0V, I
C
= -1.0A
I
C
= -1.0A, I
C
= -50mA
I
C
= -1.0A, I
B
= -100mA
V
CE
= -2.0V, I
C
= -1.0A,
70
100
55
300
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
Small Signal Characteristics
f
T
Transition Frequency
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
-0.3
-1.25
-1.0
V
V
V
V
CE
= -5V, I
C
= -100mA, f = 100MHz
75
MHz
Parameter
Max.
1.2
9.7
103
Units
W
mW/
°
C
°
C/W
NZT753
PNP Current Driver Transistor
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 5P.
SOT-223
1
2
4
3
1. Base 2. Collector 3. Emitter
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參數(shù)描述
NZT753_NL 功能描述:兩極晶體管 - BJT PNP Power transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
NZT753_Q 功能描述:兩極晶體管 - BJT PNP Power Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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